On Tuesday, Qualcomm had launched is first 7nm X24 2 Gbps and X50 5 Gbps modems. Today, well-known tipster Roland Quandt has confirmed through a tweet that developers at Qualcomm are working 7nm Snapdragon 855 chipset.
Samsung Galaxy S9 and Galaxy S9+ are powered by second-generation 10nm FinFET chipset. It is an incremental update over the predecessor Snapdragon 835 chipset that offers 10 percent higher performance and consumes 10 percent lesser power.
Early rumors hint that the Snapdragon 855 will be built by TSMC and not by Samsung. The chipsets could be ready to power the 2019 flagship phones. It is expected to deliver 40 percent better performance and consume 37 percent less power over the 10nm chipset. There is a possibility that the Galaxy S series flagship from 2019 may be fueled by the upcoming 7nm chipset.
The leakster has not revealed any information on the announcement of the Snapdragon 855. Previous leaks have claimed that it the chipset could be could named as Hana V 1.0. It is speculated that the SD855 powered smartphones will arrive with ultrasonic under-display fingerprint scanner. The SoC is likely to get unveiled at the end of this year.
